Anisotropic plasma etching of barium-strontium-titanate thin films for 4 Gbit DRAM devices

Materials Research Society Symposium - Proceedings

Volumn 596, Issue , 2000, Pages 109-114

  Schneider, Stefan ^a   Kennard, Mark A ^b   Waser, Rainer ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; BARIUM COMPOUNDS; CAPACITORS; DYNAMIC RANDOM ACCESS STORAGE; MASKS; PHOTORESISTS; PLASMA DENSITY; PLASMA ETCHING; REACTIVE ION ETCHING; SILICON WAFERS; SPUTTER DEPOSITION;

BARIUM STRONTIUM TITANATE; GAS PRESSURE; TRANSFORMER COUPLED PLASMA;

THIN FILMS;

EID: 0033710403     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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