SUBMILLIMETER WAVE InP-BASED HEMTs with fmax over 600 GHz

Optics InfoBase Conference Papers

Volumn , Issue , 1999, Pages 2-4

  Matloubian, M ^a   Pobanz, C ^a   Docter, D ^a   Case, M ^a   Micovic, M ^a   Nguyen, C ^a   Yu, M ^a   Lui, M ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; OPTICAL FIBERS; SCATTERING PARAMETERS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR ALLOYS; SUBMILLIMETER WAVES;

GATE-LENGTH; INP HEMT; MATERIAL SYSTEMS; ON-WAFER; RF PROBE; S -PARAMETERS; THREE-STAGE AMPLIFIERS;

INDIUM PHOSPHIDE;

EID: 0003911981     PISSN: None     EISSN: 21622701     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. U. K. Mishra and J. B. Shealy, "InP-Based HEMTs: Status and Potential," Proceedings of Sixth International Conference on Indium Phosphide and Related Materials, 1994, pp.14-17.
2. C. Pobanz, M. Matloubian, M. Lui, H.-C. Sun, M. Case, C. Ngo, P. Janke, T. Gaier, L. Samoska, "A High-Gain Monolithic D-Band InP HEMT Amplifier," IEEE GaAs IC Symposium Digest, pp. 41-44, 1998.
3. M. Matloubian, D. Docter, C. Nguyen, T. Liu, S. Bui, and C. Ngo, "Ga0.47In0.53As/InP HEMTs with Novel GaP0.35Sb0.65 Schottky Layers Grown by MOVPE," in Proceedings of the 56th Annual Device Research Conference (DRC), Charlottesville, VA, June 1998.