Electrical characterization of short gate In0.60Ga0.40As/In0.36Al0.64As0.84Sb0.16 high electron mobility transistors on InP substrate

Electronics Letters

Volumn 36, Issue 4, 2000, Pages 357-358

  Micovic, M ^a   Matloubian, M ^a   Hu, M ^a   Harvey, D S ^a   Nguyen, C ^a   Janke, P ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; GATES (TRANSISTOR); SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

COMPOSITE SCHOTTKY BARRIERS; DRAIN CURRENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033887287     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000270     Document Type: Article

References (4)

1. NGUYEN, L.D., BROWN, A.S., THOMPSON, M.A., and JELLOIAN, L.: '50 nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistor', IEEE Trans., 1992, ED-39, pp. 2007-2014
2. 0.15 Schottky layer', IEEE Electron Device Lett., 1997, 19, pp. 195-197
3. DOCTER, D., MATLOUBIAN, M., MICOVIC, M., NGUYEN, C., NGO, C., BUI, S., and JANKE, P.: 'Next generation HEMTs'. 57th Annual Device Research Conf. Dig., 1999, pp. 146-149
4. 0.47As field effect transistor', Electron. Lett., 1999, 35, pp. 1673-1674