MBE growth of novel MgSe/ZnSeTe: N II-VI compound superlattice quasi-quaternaries on InP substrates and application to light-emitting diodes

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 954-956

  Nomura, Ichirou ^a   Shinozaki, Wataru ^a   Hattori, Hiroshi ^a   Sano, Takashi ^a   Che, Song Bek ^a   Shimbo, Hiroyuki ^a   Kikuchi, Akihiko ^a   Shimomura, Kazuhiko ^a   Kishino, Katsumi ^a  

^a SOPHIA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPOSITION EFFECTS; LIGHT EMITTING DIODES; MAGNESIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES;

PULSED CURRENT INJECTION; SUPERLATTICE QUASI-QUATERNARIES;

MOLECULAR BEAM EPITAXY;

EID: 0032650564     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01504-8     Document Type: Article

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