Epitaxy of Zn1 - xMgxSeyTe1 - y on (100)InAs

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 54-57

  Litz, M Th ^a   Watanabe, K ^b   Korn, M ^a   Ress, H ^a   Lunz, U ^a   Ossau, W ^a   Waag, A ^a   Landwehr, G ^a   Walter, Th ^c   Neubauer, B ^c   Gerthsen, D ^c   Schussler U ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b UNIVERSITY OF YAMANASHI   (Japan)

^c UNIVERSITY OF KARLSRUHE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ENERGY GAP; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

BAND GAP; LATTICE MATCH; ROCKING CURVE;

EPITAXIAL GROWTH;

EID: 0030562401     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00881-0     Document Type: Article

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