Difference in the structures on highly B-doped Si(111) surfaces by heating treatments

Surface Science

Volumn 454, Issue 1, 2000, Pages 21-25

  Nakamura, K ^a   Masuda, K ^a   Shigeta, Y ^a  

^a YOKOHAMA CITY UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; DOPING (ADDITIVES); REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SURFACE PHENOMENA; SURFACE STRUCTURE; SURFACE TREATMENT;

ADATOMS; FLASHING; SURFACE RECONSTRUCTION; SURFACE RELAXATION;

SILICON;

EID: 0033703949     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00246-6     Document Type: Article

References (14)

1. Headrick R.L., Robinson I.K., Vlieg E., Feldman L.C. Phys. Rev. Lett. 63:1989;1253.
2. Bedrossian P., Meade R.D., Mortensen K., Chen D.M., Golovchenko J.A., Vanderbilt D. Phys. Rev. Lett. 63:1989;1257.
3. Lyo I.-W., Kaxiras E., Avouris Ph. Phys. Rev. Lett. 63:1989;1261.
4. Takayanagi K., Tanishiro Y., Takahashi S., Takahashi M. Surf. Sci. 164:1985;367.
5. Zotov A.V., Kulakov M.A., Bullemer B., Eisele I. Phys. Rev. B. 53:1996;12 902.
6. Hibino H., Ogino T. Surf. Sci. 412-413:1998;132.
7. Köhler U., Demuth J.E., Hamers R.J. J. Vac. Sci. Technol. 7:1989;2860.
8. Shigeta Y., Endo J., Maki K. Phys. Rev. B. 51:1995;2021.
9. Shigeta Y. Surf. Rev. Lett. 5:1998;865.
10. Yamaguchi K., Mitsui H., Shigeta Y. J. Vac. Sci. Technol. A. 15:1997;2569.
11. Shigeta Y., Fukaya Y., Mitsui H., Nakamura K. Surf. Sci. 402-404:1998;313.
12. Ichimiya A. Jpn. J. Appl. Phys. 22:1983;176.
13. Dudarev S.L., Peng L.-M., Whelan M.J. Surf. Sci. 330:1995;86.
14. Fukaya Y., Nakamura K., Shigeta Y. J. Vac. Sci. Technol. A. 2000;. in press.