Influence of surface structure on epitaxial growth of Si on Si(111)-(7 × 7) substrate

Surface Review and Letters

Volumn 5, Issue 3-4, 1998, Pages 865-872

  Shigeta, Yukichi ^a  

^a YOKOHAMA CITY UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032335366     PISSN: 0218625X     EISSN: None     Source Type: Journal    
DOI: 10.1142/s0218625x98001237     Document Type: Article

References (10)

1. K. Takayanagi, Y. Tanishiro, S. Takahashi and M. Takahashi, Surf. Sci. 164, 367 (1985).
2. Y. Shigeta, J. Endo and K. Maki, Phys. Rev. B51, 2021 (1995).
3. Y. Shigeta, J. Endo and K. Maki, J. Crystal Growth 166, 617 (1996).
4. Y. Shigeta, Y. Fukaya, H. Mitsui and K. Nakamura, Surf. Sec. (1998), in print.
5. H. Fujino, Y. Shigeta and K. Maki, to be submitted.
6. M. Ichikawa and T. Doi, Appl. Phys. Lett. 50, 1141 (1987).
7. B. Voigtländer and T. Weber, Phys. Rev. Lett. 77, 3861 (1996).
8. Y. Horio and A. Ichimiya, Surf. Sci. 298, 261 (1993).
9. D. Vanderbilt, Phys. Rev. B36, 6209 (1987).
10. H. Tochihara and W. Shimada, Surf. Sci. 296, 186 (1993).