Characterization of dark noise in CdZnTe spectrometers

Journal of Electronic Materials

Volumn 27, Issue 6, 1998, Pages 807-812

  Nemirovsky, Y ^a   Asa, G ^a   Ruzin, A ^a   Gorelik, J ^a   Sudharsanan, R ^b  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b SPIRE CORPORATION   (United States)

Author keywords

CdZnTe; Metal semiconductor metal (MSM) detectors; Noise currents; X ray and ray detectors

Indexed keywords

EID: 0342263273     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0057-8     Document Type: Article

References (10)

1. R.B. James, T.E. Schlesinger, J.C. Lund and M. Schieber, Semiconductors for Room Temperature Nuclear Detector Applications, ed. T.E. Schlesinger and R.B. James Vol. 43, Semiconductors and Semimetals, (New York: Academic Press, 1995), ch. 9.
2. J.F. Butler, Properties of Narrow Gap Cadmium-based Compounds, ed. P. Capper, EMIS data reviews series, No. 10, (London: INSPEC, 1994), p. 587.
3. L. Verger et al., J. Electron. Mater. 26 (6), 738 (1997).
4. Y. Nemirovsky, A. Ruzin, G. Asa, J. Gorelik and L. Li, J. Electron. Mater. 26 (6), 756 (1997).
5. Y. Nemirovsky, G. Asa, C.B. Jakobson and A. Ruzin, J. Electron. Mater. 27 (6), 800 (1998).
6. A. Ruzin and Y. Nemirovsky, Appl. Phys. Lett. 71 (15), 2214 (1997).
7. N.H. Karam and R. Sudharsanan, J. Electron. Mater. 26 (6), 745 (1997).
8. eV products, div. of II-VI Incorporated, 375 Saxonburg Blvd., Saxonburg, PA 16056.
9. A. van der Ziel, Noise in Solid State Devices and Circuits Wiley, N.Y. (1986).
10. A. Ruzin and Y. Nemirovsky, J. Appl. Phys. 82 (9), 2754 (1997).