High concentration doping of 6H-SiC by ion implantation: Flash versus furnace annealing

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Panknin, D ^a   Wirth, H ^a   Anwand, W ^a   Brauer, G ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; CARRIER CONCENTRATION; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; ION IMPLANTATION; NITROGEN; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SPECTROSCOPY;

ELECTRICAL ACTIVATION; FLASH LAMP ANNEALING; FURNACE ANNEALING; POSITRON ANNIHILATION SPECTROSCOPY;

SILICON CARBIDE;

EID: 0033702565     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (10)

1. H. Wirth, D. Panknin, W. Skorupa, E. Niemann, Appl. Phys Lett. 74 (1999) 979
2. D. Panknin, H. Wirth, A. Mücklich, W. Skorupa; Mat. Sci. Engin. B 61-62 (1999) 363
3. S. Yaguchi, T. Kimoto, N. Ohyama, H. Matsunami; Jap. J. Appl. Phys. 34 (1995) 3036
4. J.N. Pan, J.A. Cooper M.R. Melloch; J. Electr. Mat. 26 (1997) 208
5. S. Ahmed, C.J. Barbero, T.W. Sigmon; Appl. Phys. Lett. 66 (1995) 712
6. Z.V. Dzhibuti, N.D. Dolidze, G.Sh. Narsiya, G.L. Eristavi; Tech. Phys. Lett. 23 (1997) 746
7. G. Pensl, W. Suttrop, H. Zhang, R. Helbig, P. Glasow, P. Lanig, G. Ziegler; Advances in Physics of Materials (1989) 159
8. Y. Hirano, T. Inada; J. Appl. Phys. 77 (1995) 1020
9. E. Niemann, D. Panknin, W. Skorupa, H. Wirth; German Patent pending (Nr. 198 08 246.0)
10. G. Pensl, W.J. Choyke; Physica B 185 (1993) 264