Electrical properties of contacts on p-type Cd0.8Zn0.2Te crystal surfaces

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 448, Issue 3, 2000, Pages 581-585

  Wang, Linjun ^a   Sang, Wenbin ^a   Shi, Weimin ^a   Qian, Yongbiao ^a   Min, Jiahua ^a   Liu, Donghua ^a   Xia, Yiben ^a  

^a SHANGHAI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONTACTS; ELECTRIC PROPERTIES; ELECTROLESS PLATING; GAMMA RAYS; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SURFACE ROUGHNESS; SURFACE TREATMENT;

CADMIUM ZINC TELLURIDE;

RADIATION DETECTORS;

EID: 0033702258     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(00)00293-X     Document Type: Article

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