Coplanar 148 GHz cascode amplifier MMIC using 0.15 μm GaAs PHEMTs

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2000, Pages 991-994

  Tessmann, A ^a   Wohlgemuth, O ^a   Reuter, R ^a   Haydl, W H ^a   Massler, H ^a   Huelsmann, A ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR; TWO STAGE D-BAND AMPLIFIER;

CASCADE CONNECTIONS; COMPUTER SIMULATION; EQUIVALENT CIRCUITS; FLIP CHIP DEVICES; GAIN MEASUREMENT; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; HIGH FREQUENCY AMPLIFIERS; SCATTERING PARAMETERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; WAVEGUIDES;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0033693996     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (13)

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