Room temperature I-V characteristics of Si/Si1-xGex/Si interband tunneling diodes

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 7, Issue 3, 2000, Pages 836-839

  Duschl, R ^a   Schmidt, O G ^a   Eberl, K ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

ESAKI TUNNELING DIODES; SILICON GERMANIDE;

TUNNEL DIODES;

EID: 0033690654     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(00)00072-2     Document Type: Article

References (14)

1. Esaki L. Phys. Rev. 109:1958;603.
2. Sollner T.C.L.G., Goodhue W.D., Tannenwald P.E., Parker C.D., Peck D.D. Appl. Phys. Lett. 43:1983;588.
3. Sun J.P., Haddad G.I., Mazumder P., Schulman J.N. Proc. IEEE. 86:1998;639.
4. Mazumder P., Kulkarni S., Bhattacharya M., Sun J.P., Haddad G.I. Proc. IEEE. 86:1998;662.
5. Chang L.L., Esaki L., Tsu R. Appl. Phys. Lett. 24:1974;593.
6. Ismail K., Meyerson B.S., Wang P.J. Appl. Phys. Lett. 59:1991;973.
7. Tsu R. Nature. 364:1993;19.
8. Wu K.-H., Fang Y.-K., Ho J.-J., Hsieh W.-T., Chen T.-J. Appl. Phys. Lett. 72:1998;3017.
9. Jorke H., Kibbel H., Strohm K., Kasper E. Appl. Phys. Lett. 63:1993;2408.
10. Rommel S.L., Dillon T.E., Dashiell M.W., Feng H., Kolodzey J., Berger P.R., Thompson P.E., Hobart K.D., Lake R., Seabaugh A.C., Klimeck G., Blanks D.K. Appl. Phys. Lett. 73:1998;2191.
11. Duschl R., Schmidt O.G., Reitemann G., Kasper E., Eberl K. Electron. Lett. 35:1999;1111.
12. Franks V.M., Hulme K.F., Morgan J.R. Solid State Electron. 8:1965;343.
13. Sweeny M., Xu J. Appl. Phys. Lett. 54:1989;546.
14. Kane E.O. J. Phys. Chem. Solids. 12:1959;181.