Effects of film thickness and grain size on the electrical properties of Pb(Zr,Ti)O3 thin films prepared by MOCVD

Ferroelectrics

Volumn 241, Issue 1, 2000, Pages 183-190

  Shimizu, Masaru ^a   Nakashima, Seiji ^a   Kaibara, Kazuyuki ^a   Fujisawa, Hironori ^a   Niu, Hirohiko ^a  

^a UNIVERSITY OF HYOGO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; FILM PREPARATION; GRAIN SIZE AND SHAPE; LEAD COMPOUNDS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; POLYCRYSTALLINE MATERIALS; STRONTIUM COMPOUNDS; THIN FILMS;

LEAD TITANIUM TITANATE; LEAD ZIRCONIUM TITANATE;

FERROELECTRIC MATERIALS;

EID: 0033690037     PISSN: 00150193     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1080/00150190008224990     Document Type: Article

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