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Physical Review Letters

Volumn 71, Issue 8, 1993, Pages 1176-1179

Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs

(3) Feenstra, R M a Woodall, J M a Pettit, G D a

a IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001299246 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.71.1176 Document Type: Article

Times cited : (179)

References (12)

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- Identification of AsGa antisites in plastically deformed GaAs
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7
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- B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer-Verlag, Berlin, 1984). The energy scale for Coulomb interactions is e2N1/3/ curlep = 0.052 eV for our system with dielectric constant of curlep = 12.9 and defect concentration of N = 1 times 1020 cm-3. The Coulomb gap is typically twice this value.

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.