Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition

Thin Solid Films

Volumn 368, Issue 2, 2000, Pages 279-282

  Xu, Dapeng ^a   Yang, Hui ^a   Li, J B ^a   Li, S F ^a   Zhao, D G ^a   Wang, Y T ^a   Sun, X L ^a   Wu, R H ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; EPITAXIAL GROWTH; HEAT TREATMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; THERMAL EFFECTS;

BUFFER LAYER; CRYSTALLINE QUALITY; CUBIC GALLIUM NITRIDE; HALL MEASUREMENTS; TEMPERATURE RAMPING PROCESS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033685913     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00782-3     Document Type: Article

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