Gallium diffusion through cubic GaN films grown on GaAs(1 0 0) at high-temperature using low-pressure MOVPE

Journal of Crystal Growth

Volumn 191, Issue 4, 1998, Pages 646-650

  Xu, Da Peng ^a   Yang, Hui ^a   Zheng, Lian Xi ^a   Wang, Xiao Jun ^a   Duan, Li Hong ^a   Wu, Rong Han ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; ELECTRIC PROPERTIES; FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE; LOW PRESSURE METALLORGANIC VAPOR-PHASE EPITAXY;

SEMICONDUCTING FILMS;

EID: 0032140558     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0022-0248(98)00376-5     Document Type: Article

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