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Volumn 58, Issue 20, 1991, Pages 2288-2290
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Measurements of the three-dimensional impurity profile in Si using chemical etching and scanning tunneling microscopy
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NTT CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 21544450078
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.104901 Document Type: Article |
Times cited : (45)
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References (11)
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