Survivability of InP HEMT devices and MMIC's under high RF input drive

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2000, Pages 1917-1920

  Chen, Y C ^a   Barsky, M ^a   Tsai, R ^a   Lai, R ^a   Yen, H C ^a   Oki, A ^a   Streit, D C ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM PHOSPHIDE HIGH ELECTRON MOBILITY TRANSISTOR DEVICE; MONOLITHIC MICROWAVE INTEGRATED CIRCUIT AMPLIFIERS;

CAPACITORS; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; IMPEDANCE MATCHING (ELECTRIC); MICROSTRIP LINES; MICROWAVE AMPLIFIERS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RESISTORS; SEMICONDUCTING INDIUM PHOSPHIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033678290     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)

1. R. Lai, M. Barsky, T. Huang, M. Sholley, H. Wang, Y. Kok, D. Streit, T. Block, P. Liu, T. Gaier, and L. Samoska, "An InP MMIC LNA with 7.2 dB gain at 190 GHz," IEEE Microwave Guided Wave Lett., vol. 8, pp. 393-395, 1998.
2. S. Weinreb, Fellow, IEEE, T. Gaier, R. Lai, M. Barsky, Y. C. Leong, and L. Samoska, Member, IEEE, "High-Gain 150-215-GHz MMIC Amplifier with Integral Waveguide Transitions," IEEE Microwave and Guided Wave Lett., vol. 9, pp. 282-284, 1999.
3. Y. C. Chen, D. L. Ingram, R. Lai, M. Barsky, R. Grundbacher, T. Block, H. C. Yen, and D. C. Streit, "A 95 GHz InP HEMT MMIC amplifier with 427 mW power output, "IEEE MGWL, vol. 8, no. 11, pp. 399-401, 1998.
4. Y. C. Chen, D. L. Ingram, D. Yamauchi, B. Brunner, J. Kraus, M. Barsky, R. Grundbacher, S. K. Cha, R. Lai, T. Block, M. Wojtowicz, T. P. Chin, B. Allen, H. C. Yen, and D. C. Streit., "A Single Chip 1-W InP HEMT V-Band Module," in Proc. IEEE GaAs IC Symp. Dig. pp. 149-152, 1999.
5. R. Grundbacher, R. Lai, M. Nishimoto, T. P. Chin, Y. C. Chen, M. Barsky, T. Block, and D. Streit, "Pseudomorphic InP HEMTs with dry etched source vias having 190 mW output power and 40% PAE at V-band," IEEE Electron Device Lett., Vol. 20, No. 10, pp. 517-519, 1999.