Pseudomorphic InP HEMT's with dry-etched source vias having 190 mW output power and 40% PAE at V-band

IEEE Electron Device Letters

Volumn 20, Issue 10, 1999, Pages 517-519

  Grundbacher, R ^a   Lai, R ^a   Nishimoto, M ^a   Chin, T P ^a   Chen, Y C ^a   Barsky, M ^a   Block, T ^a   Streit, D ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; HETEROJUNCTIONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES;

POWER ADDED EFFICIENCY (PAE);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033321051     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.791928     Document Type: Article

References (12)

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