Long wavelength (3-5 and 8-12 μm) photoluminescence of InAs 1-xSbx grown on (100) GaAs by molecular-beam epitaxy

Journal of Applied Physics

Volumn 64, Issue 2, 1988, Pages 952-955

  Yen, M Y ^a   People, R ^a   Wecht, K W ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 35348820333     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.341904     Document Type: Article

References (6)