Applicability of the high field model: An analytical study via asymptotic parameters defining domain decomposition

VLSI Design

Volumn 8, Issue 1-4, 1998, Pages 135-141

  Cercignani, Carlo ^a,e,f,g,h,i   Gamba, Irene M ^b   Jerome, Joseph W ^c   Shu, Chi Wang ^d  

^a POLITECNICO DI MILANO   (Italy)

^b NEW YORK UNIVERSITY   (United States)

^c NORTHWESTERN UNIVERSITY   (United States)

^d BROWN UNIVERSITY   (United States)

^e UNIVERSITY OF MILAN   (Italy)

^f MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^g University of Milano ^*

^h ACCADEMIA NAZIONALE DEI LINCEI   (Italy)

ⁱ Natl Group for Mathematical Physics

Author keywords

Asymptotic parameters; Augmented drift diffusion; Domain decomposition; High field model; Mesoscopic macroscopic model

Indexed keywords

APPROXIMATION THEORY; ELECTRIC FIELDS; MATHEMATICAL MODELS;

ASYMPTOTIC PARAMETERS; AUGMENTED DRIFT-DIFFUSION; BOLTZMANN TRANSPORT EQUATION (BTE); DOMAIN DECOMPOSITION; MESOSCOPIC-MACROSCOPIC MODEL;

CHARGE CARRIERS;

EID: 0032315021     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/1998/54618     Document Type: Article

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