Applicability of the high field model: A preliminary numerical study

VLSI Design

Volumn 8, Issue 1-4, 1998, Pages 275-282

  Cercignani, Carlo ^a   Gamba, Irene M ^b   Jerome, Joseph W ^c   Shu, Chi Wang ^d  

^a POLITECNICO DI MILANO   (Italy)

^b NEW YORK UNIVERSITY   (United States)

^c NORTHWESTERN UNIVERSITY   (United States)

^d BROWN UNIVERSITY   (United States)

Author keywords

Augmented drift diffusion; Domain decomposition; ENO algorithm; High field model

Indexed keywords

ALGORITHMS; BOUNDARY CONDITIONS; CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRIC FIELDS; FINITE DIFFERENCE METHOD; HYDRODYNAMICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

DRIFT-DIFFUSION MODEL; ESSENTIALLY NON-OSCILLATORY (ENO) ALGORITHM;

SEMICONDUCTOR DEVICE MODELS;

EID: 0032311974     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/1998/56862     Document Type: Article

References (9)

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