High field approximations to a Boltzmann-Poisson system and boundary conditions in a semiconductor

Applied Mathematics Letters

Volumn 10, Issue 4, 1997, Pages 111-117

  Cercignani, C ^a   Gamba, I M ^b   Levermore, C D ^c  

^a POLITECNICO DI MILANO   (Italy)

^b NEW YORK UNIVERSITY   (United States)

^c UNIVERSITY OF ARIZONA   (United States)

Author keywords

Boltzmann Poisson system; Boundary conditions; Fluid models; High electric fields; Semiconductors

Indexed keywords

EID: 0040692207     PISSN: 08939659     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0893-9659(97)00069-4     Document Type: Article

References (12)

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3. C. Cercignani, I.M. Gamba and C.D. Levermore, A high field approximation to a Boltzmann-Poisson system in bounded domains, (to appear).
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