SCOPUS 정보 검색 플랫폼

Volumn 72, Issue 19, 1998, Pages 2388-2390

High-power inter-miniband lasing in intrinsic superlattices

(8) Tredicucci, Alessandro a Capasso, Federico a Gmachl, Claire a Sivco, Deborah L a Hutchinson, Albert L a Cho, Alfred Y a Faist, Jérome a Scamarcio, Gaetano a

a LUCENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; ELECTRONS; FERMI LEVEL; LASERS; LIGHT EMISSION; LIGHT SCATTERING; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES; TEMPERATURE;

INTER-MINIBAND LASING; QUANTUM CASCADE LASERS;

SUPERLATTICES;

EID: 0032069211 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.121365 Document Type: Article

Times cited : (50)

References (11)

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11
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- This effect has to be distinguished from the breaking up of the minibands into localized states, which occurs with the penetration of the electric field into the SL and would give rise to a very different energy spectrum.
- This effect has to be distinguished from the breaking up of the minibands into localized states, which occurs with the penetration of the electric field into the SL and would give rise to a very different energy spectrum.

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