Anistropic multi-step etch processes of silicon

Journal of Micromechanics and Microengineering

Volumn 7, Issue 3, 1997, Pages 137-140

  Frühauf, Joachim ^a   Hannemann, Birgit ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; MASKS; SILICON WAFERS;

MULTISTEP ETCHING;

MICROELECTROMECHANICAL DEVICES;

EID: 0031221058     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/7/3/015     Document Type: Article

References (8)

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2. Zielke D and Frühauf J 1995 Determination of rates for orientation-dependent etching Sens. Actuators A 48 151-6
3. Frühauf J, Trautmann K, Wittig J and Zielke D 1993 A simulation tool for orientation dependent etching J. Micromech. Microeng. 3 113-5
4. Dietrich D and Frühauf J 1993 Computer simulation of the development of dish-shaped deepenings by orientation-dependent etching of {100} silicon Sens. Actuators A 39 261-2
5. Koide A, Sato K and Tanaka S 1991 Simulation of two-dimensional etch profile of silicon during orientation-dependent anisotropic etching Proc. IEEE Micro Electro Mechanical Systems (MEMS) (Nara, Japan) 30 January-2 February 1991 IEEE Tech. Dig. pp 216-20
6. Weihrauch D F 1975 Correlation of the anisotropic etching of single-crystal silicon spheres and wafers J. Appl. Phys. 46 1478-83
7. Shaw D W 1979 Morphology analysis in localized crystal growth and dissolution J. Crystal Growth 47 509-17
8. Merlos A, Acero M C, Bao M H, Bausells J and Esteve J 1992 A study of the undercutting characteristics in the TMAH-IPA system J. Micromech. Microeng. 2 181-3