Highly selective SiO2/Si etching and related kinetics in time-modulated helicon wave plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 6 SUPPL. A, 1996, Pages 3585-3589

  Chinzei, Yasuhiko ^a   Shindo, Haruo ^b   Horiike, Yasuhiro ^a  

^a TOYO UNIVERSITY   (Japan)

^b TOKAI UNIVERSITY   (Japan)

Author keywords

Appearance voltage mass spectroscopy; Radical kinetics in SiO2 etching; Selective SiO2 Si etching; Time modulated helicon wave plasma

Indexed keywords

CARBON INORGANIC COMPOUNDS; ELECTRIC DISCHARGES; ETCHING; HYDROGEN; ION BOMBARDMENT; MASS SPECTROMETERS; MODULATION; SEMICONDUCTING POLYMERS; SEMICONDUCTING SILICON; SILICA; SURFACES; X RAY PHOTOELECTRON SPECTROSCOPY;

APPEARANCE VOLTAGE MASS SPECTROSCOPY; INDUCTIVELY COUPLED PLASMA; OPTICAL EMISSION SPECTROSCOPY MEASUREMENT; RADICAL KINETICS; TIME MODULATED HELICON WAVE PLASMA;

PLASMAS;

EID: 0030174002     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.3585     Document Type: Article

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