Surface electronic structure of GaAs(311)A studied by angle-resolved photoelectron spectroscopy

Surface Science

Volumn 366, Issue 1, 1996, Pages 121-128

  Olsson, L O ^a   Bjorkqvist M ^b   Kanski, J ^a   Ilver, L ^a   Nilsson, P O ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Angle resolved photoemission; Gallium arsenide; Low index single crystal surfaces; Surface electronic phenomena; Surface relaxation and reconstruction

Indexed keywords

ANNEALING; BAND STRUCTURE; CHEMICAL BONDS; ELECTRONIC STRUCTURE; MATHEMATICAL MODELS; RELAXATION PROCESSES; SPECTRUM ANALYSIS; SPUTTERING; SURFACE STRUCTURE; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGLE RESOLVED PHOTOEMISSION SPECTROSCOPY; ELECTRON COUNTING; SURFACE BANDS; SURFACE BRILLOUIN ZONE; SURFACE GEOMETRY MODELS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030269582     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00658-9     Document Type: Article

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