Defect accumulation in Si due to systematic bombardment by argon and nitrogen ions (molecular effect)

Semiconductors

Volumn 30, Issue 10, 1996, Pages 990-991

  Abroyan, I A ^a   Nikulina, L M ^a  

^a PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039613742     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

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2. I. A. Abroyan and L. M. Nikulin, Abstracts of Talks at the XXV International Conf. on the Physics of Charge Particle Interactions in Crystals, Izd-vo. MGU, Moscow (1995), p. 98.
3. A. F. Burenkov, F. F. Komarov, M. A. Kumakhov, and M. M. Temkin, Spatial Distribution of Energy Released in Atomic Collision Cascades in Solids [in Russian], Energoatomizdat, Moscow (1985).
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5. I. A. Abroyan, L. M. Nikulina, and A. I. Titov, Fiz. Tekh. Poluprovodn. 19, 1030 (1985) [Sov. Phys. Semicond. 19, 632 (1985)].
6. J. A. Moore, G. Carter, and A. W. Tinsley, Rad. Eff. 25, 49 (1975).
7. D. A. Thompson and R. S. Walker, Nucl. Instrum. Methods 132, 281 (1976).
8. D. A. Thompson and R. S. Walker, Radiat. Eff. 36, 91 (1978).
9. R. S. Walker and D. A. Thompson, Radiat. Eff. 37, 113 (1978).
10. J. A. Davies, in T. S. Williams and J. M. Poate, Eds., Ion Implantation and Beam Processing, Academic Press (1984).
11. I-A. Abroyan and L. M. Nikulina, in Materials from the XII International Conf. on the Interaction of Ions with Surfaces, Zvenigorod, Russia (1995), VoL 2, p. 285.
12. G. Foti, G. Vitali, and J. A. Davies, Radiât. Eff. 32, 132 (1977).