Numerical prediction of operational parameters in Czochralski growth of large-scale Si

Journal of Crystal Growth

Volumn 163, Issue 3, 1996, Pages 249-258

  Chung, Hyung Tae ^a   Lee, Seung Cheol ^a   Yoon, Jong Kyu ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; FLOW OF FLUIDS; INTERFACES (MATERIALS); MASS TRANSFER; NUMERICAL METHODS; OXYGEN; SEMICONDUCTING SILICON; SOLIDIFICATION; TURBULENT FLOW;

CRYSTAL ROTATION RATES; CZOCHRALSKI GROWTH; NUMERICAL CALCULATION; SOLIDIFICATION INTERFACE; TURBULENT FLUID MOTIONS; TWO EQUATION MODEL;

CRYSTAL GROWTH FROM MELT;

EID: 0030172679     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00978-7     Document Type: Article

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