Radiation effect on metal-contaminated Si diodes

Journal of the Korean Physical Society

Volumn 35, Issue SUPPL. 2, 1999, Pages

  Hakata, T ^a   Ohyama, H ^a   Kobayashi, K ^a   Simoen, E ^b   Claeys, C ^b   Takami, Y ^c   Sunaga, H ^d   Miyahara, K ^e  

^a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b IMEC   (Belgium)

^c RIKKYO UNIVERSITY   (Japan)

^d JAPAN ATOMIC ENERGY AGENCY   (Japan)

^e KUMAMOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033466957     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

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4. J. Ryuta, Jpn. J. Appl. Phys. 31, 2338 (1992).
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6. H. Ohyama, J. Vanhellemont, Y. Takami, K. Hayama and H. Sunaga, IEEE Trans, on Nucl. Sci. 43, 3019 (1996).
7. H. Ohyama, J. Vanhellemont, Y. Takami, K. Hayama, H. Sunaga, I. Nashiyama, Y. Uwatoko, J. Poortmans and M. Caymax, Appl. Phys. Lett. 69, 2429 (1996).