Sapphire surface modified by a reactive ion beam for GaN depositions

Journal of the Korean Physical Society

Volumn 35, Issue SUPPL. 2, 1999, Pages

  Kim, Hyun Jeong ^a   Kim, Joosung ^a   Byun, Dongjin ^a   Park, Dalkeun ^b   Kum, Dong Wha ^b  

^a Korea University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033457031     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

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