On the origin of the positive charge on hydrogenated Si surfaces and its dependence on the surface morphology

Surface Science

Volumn 437, Issue 1, 1999, Pages 154-162

  Dittrich, Th ^a   Schwartzkopff, M ^a   Hartmann, E ^a   Rappich, J ^b  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ELECTRIC CHARGE; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; ELECTRONIC DENSITY OF STATES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGENATION; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACE STRUCTURE; WATER;

HYDROGENATED SILICON SURFACES; POSITIVE SURFACE CHARGE; SURFACE IMPERFECTIONS; SURFACE PHOTOVOLTAGE TECHNIQUE; SURFACE STATES;

SURFACES;

EID: 0033363125     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00712-8     Document Type: Article

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