Oxide precipitate-induced dislocation generation in heavily boron-doped Czochralski silicon

Journal of the Electrochemical Society

Volumn 146, Issue 9, 1999, Pages 3461-3465

  Ono, T ^a,b   Romanowski, A ^a   Asayama, E ^b   Horie, H ^b   Sueoka, K ^b   Tsuya, H ^b   Rozgonyi, G A ^a  

^a North Carolina State University   (United States)

^b Sumitomo Metal Industries Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL GROWTH FROM MELT; DENSITY (SPECIFIC GRAVITY); DISLOCATIONS (CRYSTALS); ELECTRIC CONDUCTIVITY OF SOLIDS; HIGH TEMPERATURE EFFECTS; OXIDES; PRECIPITATION (CHEMICAL); SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUPERSATURATION;

PUNCHED-OUT DISLOCATIONS (POD);

SILICON WAFERS;

EID: 0033360231     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1392496     Document Type: Article

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