Giant grown-in octahedral inclusions in as-grown silicon: Voids versus silicon oxide precipitates

Applied Physics Letters

Volumn 69, Issue 26, 1996, Pages 4008-4010

  Vanhellemont, Jan ^a,b  

^a IMEC   (Belgium)

^b SILTRONIC AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004867810     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117853     Document Type: Article

References (13)

1. J.-G. Park, S. Ushio, H. Takeno, K.-C. Cho, J.-K. Kim, and G. A. Rozgonyi, Electrochem. Soc. Proc. 94-33, 53 (1994).
2. K. Sueoka, N. Ikeda, and T. Yamamoto, Appl. Phys. Lett. 65, 1686 (1994).
3. I. Fusegawa, K. Takano, M. Kimura, and N. Fujimaki, Mater. Sci. Forum 196-201, 1683 (1995).
4. M. Hourai, T. Nagashima, E. Kajita, S. Miki, and T. Shigematsu, J. Electrochem. Soc. 142, 3193 (1995).
5. M. Itsumi, H. Akiya, T. Ueki, M. Tomita, and M. Yamawaki, J. Appl. Phys. 78, 5984 (1995).
6. E. Dornberger and W. von Amnion, J. Electrochem. Soc. 143, 1636 (1996).
7. W. J. Taylor, U. M. Gösele, and T. Y. Tan, Mater. Chem. Phys. 34, 166 (1993).
8. J. Vanhellemont, Appl. Phys. Lett. 68, 3413 (1996).
9. S. Senkader, G. Hobler, and C. Schmeiser, Appl. Phys. Lett. 69, 2202 (1996).
10. J. Vanhellemont, J. Appl. Phys. 78, 4297 (1995).
11. J. C. Mikkelsen, Mater. Res. Soc. Symp. Proc. 59, 19 (1986).
12. H. Zimmermann and H. Ryssel, Appl. Phys. A 55, 121 (1992).
13. J. Furukawa and H. Furuya, Jpn. J. Appl. Phys. 34, L156 (1995).