Cu(In,Ga)Se2 solar cells with a ZnSe buffer layer: Interface characterization by quantum efficiency measurements

Progress in Photovoltaics: Research and Applications

Volumn 7, Issue 6, 1999, Pages 423-436

  Engelhardt, F ^a   Bornemann, L ^a   Kontges M ^a   Meyer, Th ^a   Parisi, J ^a   Pschorr Schoberer, E ^b   Hahn, B ^b   Gebhardt, W ^b   Riedl, W ^c   Rau, U ^d  

^a UNIVERSITY OF OLDENBURG   (Germany)

^b UNIVERSITY OF REGENSBURG   (Germany)

^c SIEMENS AG   (Germany)

^d UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS;

BUFFER LAYERS;

SOLAR CELLS;

EID: 0033358015     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1099-159X(199911/12)7:6<423::AID-PIP281>3.0.CO;2-S     Document Type: Article

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