Application of Zn-compound buffer layer for polycrystalline CuInSe2-based thin-film solar cells

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 8, 1996, Pages 4383-4388

  Kushiya, Katsumi ^a   Nii, Tetsuro ^a   Sugiyama, Ichiro ^a   Sato, Yasuhiko ^a   Inamori, Yoshitugu ^a   Takeshita, Hiroshi ^a  

^a Central Research and Development Laboratory   (Japan)

Author keywords

Buffer layer; Chemical bath deposition method; Copper indium diselenide (CuInSe2); pn heterojunction; Thin film solar cell; Zinc compound

Indexed keywords

BUFFER LAYER; CHEMICAL-BATH DEPOSITION METHOD; COPPER INDIUM DISELENIDE; THIN-FILM SOLAR CELL;

BOUNDARY LAYERS; ENVIRONMENTAL PROTECTION; EXPERIMENTS; POLYCRYSTALLINE MATERIALS; THIN FILMS; ZINC COMPOUNDS;

SOLAR CELLS;

EID: 0030206877     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.4383     Document Type: Article

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