Effects of background n- and p-type doping on Zn diffusion in GaAs/AlGaAs multiple-quantum-well structures

Journal of Applied Physics

Volumn 86, Issue 1, 1999, Pages 259-266

  Ky, Nguyen Hong ^a   Reinhart, F K ^a   Ganiere J D ^a   Deveaud, B ^a   Blanchard, B ^b  

^a EPFL   (Switzerland)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM; INTERDIFFUSION (SOLIDS); MOLECULAR BEAM EPITAXY; MULTILAYERS; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES; ZINC;

IMPURITY-INDUCED DISORDERING (IID); TWO-DIMENSIONAL ELECTRON GAS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032613594     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370724     Document Type: Article

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