Optical absorption due to H-point defect complexes in quenched Si doped with C

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 247-250

  Fukata, Naoki ^a   Suezawa, Masashi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHT ABSORPTION; POINT DEFECTS; QUENCHING; SEMICONDUCTOR DOPING;

INTRINSIC SILICON CRYSTALS;

SEMICONDUCTING SILICON;

EID: 0033357058     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00464-0     Document Type: Article

References (19)

1. M. Suezawa, Jpn. J. Appl. Phys. 37 (1998) L259.
2. H.J. Stein, J. Electron. Mater. 4 (1975) 159.
3. B. Bech Nielsen, L. Hoffman, M. Budde, Mater. Sci. Eng. B 36 (1996) 259.
4. B. Bech Nielsen, L. Hoffman, M. Budde, R. Jones, J. Goss, S. Oberg, Mater. Sci. Forum 196-201 (1995) 933.
5. B.N. Mukashev, M.F. Tambendarov, S.Zn. Tokmoldin, V.V. Frolov, Phys. Stat. Sol. A 91 (1985) 509.
6. T.S. Shi, L.M. Xie, G.R. Bai, M.W. Qi, Phys. Stat. Solid. B 131 (1985) 511.
7. L.M. Xie, M.W. Qi, J.M. Chen, J. Phys. C 3 (1991) 8519.
8. B. Gu, Z. Xu, P. Ge, Sci. Sinica A 27 (1984) 213.
9. N. Fukata, M. Suezawa, J. Appl. Phys. 86 (1999) 1848.
10. M. Suezawa, Physica B 273-274 (1999) 222, These Proceedings.
11. I. Kwon, R. Biswas, C.Z. Wang, K.M. Ho, C.M. Soukoulis, Phys. Rev. B 49 (1994) 7242.
12. T. Akiyama, A. Oshiyama, O. Sugino, J. Phys. Soc. Jpn. 67 (1998) 4110.
13. H. Takahashi, M. Suezawa, K. Sumino, J. Appl. Phys. 78 (1995) 3077.
14. A. Van Wieringen, N. Warmoltz, Physica 22 (1956) 849.
15. M.W. Qi, G.R. Bai, T.S. Shi, L.M. Xie, Mater. Lett. 3 (1985) 467.
16. M. Suezawa, J. Appl. Phys., in press.
17. N. Fukata, M. Suezawa, in preparation.
18. T. Abe, H. Harada, J. Chikawa, Physica B 116 (1983) 139.
19. T.Y. Tan, U. Goessele, Appl. Phys. A 37 (1985) 1.