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Volumn 37, Issue 3 A, 1998, Pages
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Formation energy of interstitial Si in Au-doped Si determined by optical absorption measurements of H bound to interstitial Si
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CRYSTAL ATOMIC STRUCTURE;
GOLD;
HYDROGEN;
LIGHT ABSORPTION;
LIGHT MEASUREMENT;
QUARTZ;
SEMICONDUCTOR DOPING;
THERMAL EFFECTS;
FORMATION ENERGY;
SEMICONDUCTING SILICON;
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EID: 0032028804
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.37.l259 Document Type: Article |
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Times cited : (17)
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References (16)
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