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Volumn 207, Issue 1, 1999, Pages 27-29

(GaMg)N new semiconductor grown at high pressure of nitrogen

(7) Suski, Tadeusz a Perlin, Piotr a Pietraszko, Adam b Leszczyński, Michal a Boćkowski, Michal a Grzegory, Izabela a Porowski, Sylwester a

a INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

b INSTITUTE OF LOW TEMPERATURE AND STRUCTURE RESEARCH (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL SYMMETRY; CRYSTALLIZATION; ENERGY GAP; HIGH PRESSURE EFFECTS; HIGH TEMPERATURE EFFECTS; LATTICE CONSTANTS; NITRIDES; SEMICONDUCTOR GROWTH; STOICHIOMETRY; SYNTHESIS (CHEMICAL); THERMAL EXPANSION;

THERMAL EXPANSION COEFFICIENT;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033353479 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(99)00366-8 Document Type: Article

Times cited : (3)

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