Quasi-medium energy ion scattering spectroscopy observation of a Ge δ-doped layer fabricated by hydrogen mediated epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 5 A, 1998, Pages 2625-2628

  Fuse, Takashi ^a   Kawamoto, Kiyoshi ^a,b   Shiizaki, Takashi ^a   Tazou, Eisuke ^a   Katayama, Mitsuhiro ^a   Oura, Kenjiro ^a  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE   (Japan)

Author keywords

Atomic hydrogen; Germanium; Ion scattering spectroscopy; Molecular beam epitaxy; Silicon; Surface segregation

Indexed keywords

ATOMS; GERMANIUM; HYDROGEN; IONS; MOLECULAR BEAM EPITAXY; SCATTERING; SILICON; SPECTROSCOPY;

SURFACE SEGREGATION;

HETEROJUNCTIONS;

EID: 0032067058     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.2625     Document Type: Article

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