Impact of changes in the Pt heterostructure bottom electrodes on the ferroelectric properties of SBT thin films

Integrated Ferroelectrics

Volumn 26, Issue 1, 1999, Pages 253-268

  Kim, Seung Hyun ^a   Kim, D J ^a   Im, J ^b   Streiffer, S K ^b   Auciello, O ^b   Maria, J P ^a   Kingon, A I ^a  

^a North Carolina State University   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; CURRENT DENSITY; ELECTRODES; FERROELECTRICITY; HETEROJUNCTIONS; LEAKAGE CURRENTS; PHASE INTERFACES; PLATINUM; STRONTIUM COMPOUNDS; SURFACE ROUGHNESS; TEMPERATURE;

ANNEALING TEMPERATURE; CHEMICAL SOLUTION DEPOSITION; FILM ELECTRODE INTERFACE; LEAKAGE CURRENT DENSITY;

THIN FILMS;

EID: 0033351039     PISSN: 10584587     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1080/10584589908215626     Document Type: Article

References (17)

1. I.S. Chung, J.K. Lee, W.I. Lee, C.W. Chung, and S.B. Desu in Ferroelectric Thin Films, edited by B.A. Tuttle, S.B. Desu, R. Ramesh, and T. Shiosaki (Mat. Res. Soc. Symp. Proc. 361, Boston, 1995), p. 249.
2. S-H. Kim, J.G. Hong, J.C. Gunter, H.Y. Lee, S.K. Streiffer, and A.I. Kingon in Ferroelectric Thin Films, edited by R.E. Treece, R.E. Jones, C.M. Foster, S.B. Desu, I.K. Yoo (Mat. Res. Soc. Symp. Proc. 493, Boston, 1998), p. 131.
3. T. Mihara, H. Watanabe, and C.A. Paz de Araujo, Jpn. J. Appl. Phys. 33, 528 (1994).
4. K. Amanuma, T. Hase, and Y. Miyasaka, Appl. Phys. Lett. 66, 222 (1995).
5. C.A. Paz de Araujo, J.D. Cuchiaro, L.D. McMillan, M.C. Scott, and J.F. Scott, Nature, 374, 627 (1995).
6. C.D. Gutleben, Appl. Phys. Lett. 71(23), 3444 (1997).
7. D.T. Thomas, N. Fujimura, S.K. Streiffer, and A.I. Kingon, in Ferroelectric Thin FilmsVI, edited by R.E. Treece, R.E. Jones, C.M. Foster, S.B. Desu, I.K. Yoo (Mat. Res. Soc. Symp. Proc. 493, Boston, 1998), p.151.
8. S.R. Summerfelt, D. Kotecki, A.I. Kingon, and H.N. Al-Shareef, in Ferroelectric Thin Films IV, edited by B.E. Tuttle, S.B. Desu, R. Ramesh, T. Shiosaki (Mat. Res. Soc. Symp. Proc. 361, Boston, 1995), p.257.
9. T.J. Boyle, C.D. Buchheit, M.A. Rodriguez, H.N. Al-Shareef, B. Scott, and J.W. Ziller, J. Mater. Res. 11 (9), 1 (1996).
10. S-H. Kim, Y.S. Choi, C.E. Kim, and Y.J. Oh, J. Mater. Res. 12 (6), 1576 (1997).
11. K. Sreenivas, I. Reaney, T. Maeder, N. Setter, C. Jagadish, and R.G. Elliman, J. Appl. Phys. 75, 232 (1994).
12. J.O. Olowolafe, R.E. Jones, A.C. Campbell, R.I. Hedge, and C.J. Mogab, J. Appl. Phys. 73, 1764 (1993).
13. S-H. Kim, D-J. Kim, J. Im, C.E. Kim, and A.I. Kingon, J. Sol-Gel Science and Technology (1999, to be published).
14. S-H. Kim, D.J. Kim, K.M. Lee, M. Park, A.I. Kingon, R.J. Nemanich, J. Im, and S.K. Streiffer, submitted to J. of Materials Research (1998).
15. J. Im, O. Auciello, A.R. Krauss, A.M. Dhote, D.M. Gruen, and R.P.H. Chang, S-H. Kim, and A.I. Kingon, Appl. Phys. Lett. 74 (8), 1162 (1999).
16. X. Du, and I. Chen, in Ferroelectric Thin Films, edited by R.E. Treece, R.E. Jones, C.M. Foster, S.B. Desu, I.K. Yoo (Mat. Res. Soc. Symp. Proc. 493, Boston, 1998), p. 261.
17. H. Miura, Y. Kumakai, and Y. Fujisaki, in Ferroelectric Thin Films, edited by R.E. Treece, R.E. Jones, C.M. Foster, S.B. Desu, I.K. Yoo (Mat. Res. Soc. Symp. Proc. 493, Boston, 1998), p. 137.