Quantum gates by coupled quantum dots and measurement procedure in Si MOSFET

Physica B: Condensed Matter

Volumn 272, Issue 1-4, 1999, Pages 45-48

  Tanamoto, Tetsufumi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; GATES (TRANSISTOR); MOSFET DEVICES; SEMICONDUCTOR DEVICE MODELS;

QUANTUM GATES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033350470     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00344-0     Document Type: Article

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