Ge segregation during the initial stages of Si1-xGex alloy growth

Applied Physics Letters

Volumn 69, Issue 13, 1996, Pages 1894-1896

  Jernigan, Glenn G ^a,b   Thompson, Phillip E ^a   Silvestre, Conrad L ^a,b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b ASEE ^*

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ELECTRON SCATTERING; GERMANIUM; MOLECULAR BEAM EPITAXY; MONOLAYERS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; X RAY PHOTOELECTRON SPECTROSCOPY;

BREAK POINT; INELASTIC MEAN FREE PATH; LEADING EDGE; SILICON GERMANIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0030244912     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117469     Document Type: Article

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