Lasing in rare-earth-doped semiconductors: hopes and facts

MRS Bulletin

Volumn 24, Issue 9, 1999, Pages 27-31

  Gregorkiewicz, T ^a   Langer, J M ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; ELECTRONIC STRUCTURE; ENERGY GAP; FREE ELECTRON LASERS; LASER APPLICATIONS; LUMINESCENCE OF SOLIDS; QUENCHING; RARE EARTH ELEMENTS; SEMICONDUCTOR DOPING;

EXCITED STATE ABSORPTION; LASING; NONRADIATIVE QUENCHING PROCESS; RARE EARTH DOPED SEMICONDUCTORS; TRACKING EXCITATION PATHS;

SEMICONDUCTOR MATERIALS;

EID: 0033350060     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/s0883769400053033     Document Type: Article

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