Heteroepitaxial growth of III-V compound semiconductors for optoelectronic devices

Bulletin of Materials Science

Volumn 22, Issue 3, 1999, Pages 363-367

  Egawa, T ^a   Ishikawa, H ^a   Jimbo, T ^a   Umeno, M ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; HETEROJUNCTIONS; LIGHT EMITTING DIODES; MESFET DEVICES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM WELL LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SILICON ON SAPPHIRE TECHNOLOGY;

OPTICAL DEGRADATION; VERTICAL CAVITY SURFACE EMITTING LASER DIODE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0033349216     PISSN: 02504707     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02749943     Document Type: Article

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