A simulation study of copper reflow characteristics in vias

IEEE Transactions on Semiconductor Manufacturing

Volumn 12, Issue 3, 1999, Pages 353-365

  Friedrich, Loran J ^a   Dew, Steven K ^a   Brett, Michael J ^a   Smy, Tom ^b  

^a UNIVERSITY OF ALBERTA   (Canada)

^b CARLETON UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; ANNEALING; CHEMICAL POLISHING; COMPUTER SIMULATION; COPPER; DIFFUSION; ELECTRONIC PROPERTIES; METALLIZING; RELIABILITY; SPUTTER DEPOSITION; SURFACE PROPERTIES; TRANSPORT PROPERTIES;

CHEMICAL MECHANICAL POLISH; COPPER REFLOW; GRAIN ORIENTED FILM MICROSTRUCTURE SIMULATOR; SURFACE DIFFUSION; VIAS FILLING;

MICROELECTRONIC PROCESSING;

EID: 0033349089     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.778203     Document Type: Article

References (21)

1. D. S. Gardner and D. Fraser, "Low-temperature reflow of copper for interconnections in integrated circuits," in 1995 Proc. VLSI Multilevel Interconnection Conf., T. E. Wade, Ed., p. 287.
2. S. K. Dew, T. Smy, and M. Brett, "Step coverage, uniformity and composition studies using integrated vapor transport and film-deposition models," Jpn. J. Appl. Phys., vol. 33, p. 1140, 1994.
3. L. J. Friedrich, S. K. Dew, M. Brett, and T. Smy, "Thin film microstructure modelling through line-segment simulation," Thin Solid Films, vol. 266, p. 83, 1995.
4. L. J. Friedrich, D. S. Gardner, S. K. Dew, M. Brett, and T. Smy, "Study of the copper reflow process using the GROFILMS simulation," J. Vac. Sci. Technol. B, vol. 15, no. 5, p. 1780, 1997.
5. T. Smy, S. K. Dew, and M. J. Brett, Simulation of microstructure and surface profiles of thin films for VLSI metallization," MRS Bull., vol. 20, p. 65, 1995.
6. W. W. Mullins, "Theory of thermal grooving," J. Appl. Phys., vol. 28, p. 333, 1957.
7. S. K. Dew, "Processes and simulation for advanced integrated circuit metallization," Ph.D. dissertation, Elect. Eng. Dept., Univ. Alberta, Edmonton, Alta., Canada, , 1992.
8. R. A. Sigsbee, Nucleation, A. C. Zettlemoyer, Ed. New York: Marcel Dekker, 1969, p. 163.
9. L. J. Friedrich, "Simulation of the sputter reflow of copper," Ph.D. dissertation, Elect. Comput. Eng. Dept., Univ. Alberta, Edmonton, Alta., Canada, 1998.
10. W. W. Mullins, "Mass transport at interfaces in single component systems," Metall. Mat. Trans. A, vol. 26, p. 1917, 1995.
11. C. Herring, Physics of Powder Metallurgy, W. E. Kingston, Ed. New York: McGraw-Hill, 1951, p. 143.
12. J. D. Verhoeven, Fundamentals of Physical Metallurgy. New York: Wiley, 1975, p. 201.
13. D. S. Taylor, M. K. Jain, and T. S. Cale, "Deposition rate dependence of step coverage of sputter deposited aluminum-(1.5%) copper films," J. Vac. Sci. Technol. A, vol. 16, no. 5, p. 3123, 1998.
14. L. J. Friedrich S. K. Dew, M. Brett, and T. Smy, "Integrating system and feature scale models to study copper reflow," J. Vac. Sci. Technol., vol. 17, no. 1, p. 186, 1999.
15. L.-Y. Chen, W.-Y. Hsu, R. Tao, D. Cong, Q.-Z. Hong, R. Mosely, V. Cordasco, and F. Chen, Low temperature copper planarization using CVD and PVD copper process integration," presented at Advanced Metallization and Interconnect Systems for ULSI Applications in 1997, San Diego, CA, Sept. 30-Oct. 2, 1997.
16. K. Abe, Y. Harada, and H. Onoda, "Sub-half micron copper interconnects using reflow of sputtered copper films," in 1995 Proc. VLSI Multilevel Interconnection Conf., T. E. Wade, Ed., VMIC, Tampa, FL, 1995, p. 308.
17. D. Pramanik and A. N. Saxena, Solid State Technol., vol. 33, p. 73, 1990.
18. C. V. Thompson, "Secondary grain growth in thin films of semiconductors: Theoretical aspects," J. Appl. Phys., vol. 58, no. 2, p. 763, 1985.
19. L. R. Murr, Interfacial Phenomena in Metals and Alloys. Reading, MA: Addison-Wesley, 1975.
20. J. A. Thornton, " High rate thick film growth," Ann. Rev. Mat. Sci., vol. 7, p. 239, 1977.
21. P. Shewmon, Diffusion in Solids. Warrendale, PA: Minerals, Metals & Materials Soc., 1989.