Plasma process-induced band-gap modifications of a strained SiGe heterostructure

Applied Physics Letters

Volumn 74, Issue 21, 1999, Pages 3173-3175

  Swain, P K ^a,b   Madapur, S ^a,c   Misra, D ^a  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b SARNOFF CORPORATION   (United States)

^c Anadigics Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; REACTIVE ION ETCHING; RELAXATION PROCESSES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

PLASMA PROCESS-INDUCED BAND GAP MODIFICATIONS; VALENCE-BAND DISCONTINUITY;

HETEROJUNCTIONS;

EID: 0032606607     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124098     Document Type: Article

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