GaN homoepitaxy for device applications

Materials Research Society Symposium - Proceedings

Volumn 537, Issue , 1999, Pages

  Kamp, M ^a   Kirchner, C ^a   Schwegler, V ^a   Pelzmann, A ^a   Ebeling, K J ^a   Leszczynski, M ^a   Grzegory, I ^a   Suski, T ^a   Porovvski, S ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ELECTROLUMINESCENCE; EPITAXIAL GROWTH; HETEROJUNCTIONS; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; X RAY DIFFRACTION ANALYSIS;

BAND RECOMBINATION; CRYSTAL QUALITY; HOMOEPITAXY; TIME RESOLVED ELECTROLUMINESCENCE MEASUREMENT;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033340820     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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