Weak localization in the 2D metallic regime of Si-MOS

Annalen der Physik (Leipzig)

Volumn 8, Issue 7, 1999, Pages 579-584

  Brunthaler, G ^a   Prinz, A ^a   Bauer, G ^a   Pudalov, V M ^a,b   Dizhur, E M ^c   Jaroszynski, J ^d   Glod, P ^d   Dietl, T ^d  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^c INSTITUTE FOR HIGH PRESSURE PHYSICS   (Russian Federation)

^d INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRON SCATTERING; ELECTRON TRANSITIONS; MOS DEVICES; QUANTUM THEORY; SEMICONDUCTOR DEVICE STRUCTURES;

ELECTRON-ELECTRON INTERACTION; METAL INSULATOR TRANSITIONS; MOMENTUM RELAXATION TIME; NEGATIVE MAGNETIZATION; PHASE COHERENCE TIME; SATURATION EFFECTS; SPIN ORBIT SCATTERING; WEAK LOCALIZATION;

MAGNETORESISTANCE;

EID: 0033338982     PISSN: 00033804     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3889(199911)8:7/9<579::AID-ANDP579>3.0.CO;2-#     Document Type: Article

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